{"title":"三异质结AlGaAs-GaAs空间太阳能电池增透涂层设计","authors":"A. Al-Bustani, M. Feteha","doi":"10.1109/EDMO.1995.493694","DOIUrl":null,"url":null,"abstract":"A major task in future developments of GaAs space solar cells is to increase the power to area ratio. In this work, high performance in a new triple heterojunction AlGaAs-GaAs space solar cell is obtained by applying antireflection coating with optimum thicknesses. The effects of single and double antireflection coatings on the output characteristics are presented. The reflection from the multiple interfaces through the cell itself is taken into consideration in the optimisation calculations. The use of MgF/sub 2//ZnS as a double antireflection coating for the cell gives an efficiency of 22.101% at AM0.","PeriodicalId":431745,"journal":{"name":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","volume":"167 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"Design of antireflection coatings for triple heterojunction AlGaAs-GaAs space solar cells\",\"authors\":\"A. Al-Bustani, M. Feteha\",\"doi\":\"10.1109/EDMO.1995.493694\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A major task in future developments of GaAs space solar cells is to increase the power to area ratio. In this work, high performance in a new triple heterojunction AlGaAs-GaAs space solar cell is obtained by applying antireflection coating with optimum thicknesses. The effects of single and double antireflection coatings on the output characteristics are presented. The reflection from the multiple interfaces through the cell itself is taken into consideration in the optimisation calculations. The use of MgF/sub 2//ZnS as a double antireflection coating for the cell gives an efficiency of 22.101% at AM0.\",\"PeriodicalId\":431745,\"journal\":{\"name\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"volume\":\"167 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-11-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDMO.1995.493694\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd IEEE International Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO 95","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDMO.1995.493694","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of antireflection coatings for triple heterojunction AlGaAs-GaAs space solar cells
A major task in future developments of GaAs space solar cells is to increase the power to area ratio. In this work, high performance in a new triple heterojunction AlGaAs-GaAs space solar cell is obtained by applying antireflection coating with optimum thicknesses. The effects of single and double antireflection coatings on the output characteristics are presented. The reflection from the multiple interfaces through the cell itself is taken into consideration in the optimisation calculations. The use of MgF/sub 2//ZnS as a double antireflection coating for the cell gives an efficiency of 22.101% at AM0.