基于窄间隙半导体的太赫兹激光器

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON) Pub Date : 2016-05-09 DOI:10.1109/MIKON.2016.7492017

V. Gavrilenko, S. Morozov, V. Rumyantsev, L. Bovkun, A. Kadykov, K. V. Maremyanin, K. R. Umbetalieva, E. G. Chizhevskii, I. Zasavitskii, N. Mikhailov, S. Dvoretskii

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引用次数: 0

摘要

我们报告了PbSnSe和HgCdTe中太赫兹激光的最新研究结果。在具有扩散p-n结的PbSnSe激光器中获得了46.3微米的波长。在具有量子阱(QWs)的HgCdTe波导结构中，我们证明了受激发射(SE)波长比以前的研究增加了两倍。当SE波长为9.5微米时，阈值泵浦强度低至0.12 kW/cm2。HgCdTe的分子束外延允许薄量子阱的再生生长，可以在传导和价带中提供“对称”的能量-动量定律，就像在体PbSnSe中一样，从而抑制俄歇复合。讨论了基于高碲化镉量子阱的太赫兹激光器的进一步发展前景。

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THz lasers based on narrow-gap semiconductors

We report recent results on THz lasing in PbSnSe and HgCdTe. The wavelength of 46.3 microns was achieved in a PbSnSe laser with diffusion p-n junction. In HgCdTe waveguide structure with quantum wells (QWs) we demonstrate twofold increase in stimulated emission (SE) wavelength compared to previous works. The threshold pumping intensity is as low as 0.12 kW/cm2 for the SE wavelength of 9.5 microns. Molecular beam epitaxy of HgCdTe allows reproducible growth of thin QWs that can provide the “symmetrical” energy-momentum laws in conduction and valence bands, like in bulk PbSnSe, and thus suppress Auger recombination. Further prospects concerning THz lasers based on HgCdTe QWs are discussed.

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来源期刊

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON)

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