射频滤波器中的薄膜体声波谐振器

M. H. Memon, Zakir Khan, Muhammad Hammad Memon, Shuo Chen, F. Lin
{"title":"射频滤波器中的薄膜体声波谐振器","authors":"M. H. Memon, Zakir Khan, Muhammad Hammad Memon, Shuo Chen, F. Lin","doi":"10.1109/ICCWAMTIP.2018.8632611","DOIUrl":null,"url":null,"abstract":"Film Bulk Acoustic Resonator (FBAR)is widely used as a RF filter in advanced wireless communication system because of its high-Quality Factor (Q)and low inband losses. FBAR is also widely used as a sensor for biomedical and physical sensing. This paper describes the basic concepts of FBAR, device architecture, and the topology used to design the filter. Furthermore, we have proposed the design of 3D-FBAR based on cavity device architecture which can be used to design a RF-filter. In this design, aluminum (A1)is used as a top as well as for the bottom electrode the top electrode is hexahedron in shape, aluminum nitride (AIN)as a piezoelectric and silicon (Si)is used as a substrate. The designed model is to analyses maximum pressure of FBAR in its operating region, the resonant frequency fr which is 2.76 GHz and anti-resonant frequency fa which is 2.78 GHz and Q-factor is 730.","PeriodicalId":117919,"journal":{"name":"2018 15th International Computer Conference on Wavelet Active Media Technology and Information Processing (ICCWAMTIP)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Film Bulk Acoustic Wave Resonator in Rf Filters\",\"authors\":\"M. H. Memon, Zakir Khan, Muhammad Hammad Memon, Shuo Chen, F. Lin\",\"doi\":\"10.1109/ICCWAMTIP.2018.8632611\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Film Bulk Acoustic Resonator (FBAR)is widely used as a RF filter in advanced wireless communication system because of its high-Quality Factor (Q)and low inband losses. FBAR is also widely used as a sensor for biomedical and physical sensing. This paper describes the basic concepts of FBAR, device architecture, and the topology used to design the filter. Furthermore, we have proposed the design of 3D-FBAR based on cavity device architecture which can be used to design a RF-filter. In this design, aluminum (A1)is used as a top as well as for the bottom electrode the top electrode is hexahedron in shape, aluminum nitride (AIN)as a piezoelectric and silicon (Si)is used as a substrate. The designed model is to analyses maximum pressure of FBAR in its operating region, the resonant frequency fr which is 2.76 GHz and anti-resonant frequency fa which is 2.78 GHz and Q-factor is 730.\",\"PeriodicalId\":117919,\"journal\":{\"name\":\"2018 15th International Computer Conference on Wavelet Active Media Technology and Information Processing (ICCWAMTIP)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 15th International Computer Conference on Wavelet Active Media Technology and Information Processing (ICCWAMTIP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICCWAMTIP.2018.8632611\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 15th International Computer Conference on Wavelet Active Media Technology and Information Processing (ICCWAMTIP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCWAMTIP.2018.8632611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

薄膜体声谐振器(Film Bulk Acoustic Resonator, FBAR)具有高质量因数(quality Factor, Q)和低带内损耗等优点,在先进的无线通信系统中被广泛用作射频滤波器。FBAR还广泛用于生物医学和物理传感。本文介绍了FBAR的基本概念、器件结构和用于设计滤波器的拓扑结构。此外,我们还提出了基于腔体器件结构的3D-FBAR设计,该设计可用于rf滤波器的设计。在本设计中,采用铝(A1)作为顶部电极,底部电极采用六面体形状,氮化铝(AIN)作为压电材料,硅(Si)作为衬底。所设计的模型是分析FBAR在其工作区域的最大压力,其谐振频率为2.76 GHz,抗谐振频率为2.78 GHz, q因子为730。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Film Bulk Acoustic Wave Resonator in Rf Filters
Film Bulk Acoustic Resonator (FBAR)is widely used as a RF filter in advanced wireless communication system because of its high-Quality Factor (Q)and low inband losses. FBAR is also widely used as a sensor for biomedical and physical sensing. This paper describes the basic concepts of FBAR, device architecture, and the topology used to design the filter. Furthermore, we have proposed the design of 3D-FBAR based on cavity device architecture which can be used to design a RF-filter. In this design, aluminum (A1)is used as a top as well as for the bottom electrode the top electrode is hexahedron in shape, aluminum nitride (AIN)as a piezoelectric and silicon (Si)is used as a substrate. The designed model is to analyses maximum pressure of FBAR in its operating region, the resonant frequency fr which is 2.76 GHz and anti-resonant frequency fa which is 2.78 GHz and Q-factor is 730.
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