Hyunjin Shin, Myeonghee Oh, Jaeseung Choi, T. Song, J. Kye
{"title":"一款28nm嵌入式闪存，具有100MHz读取操作和7.42Mb/mm2, 0.85V，适用于汽车应用","authors":"Hyunjin Shin, Myeonghee Oh, Jaeseung Choi, T. Song, J. Kye","doi":"10.23919/VLSICircuits52068.2021.9492384","DOIUrl":null,"url":null,"abstract":"A 28nm embedded Flash memory in this paper is designed for the Automotive application in Foundry. Through Temperature Auto-Tracking Sense Amplifier using the Bit line Charge Boost (BCB) and Bit line Leakage current Compensation (BLC) technology, it succeeded in implementing under 10ns read operation (>100MHz) and size improvement (7.42Mb/mm2). Also Word Line and YMUX Gate Boost (WYGB) is applied to secure a sensing margin at a low voltage (0.85V). These techniques enable 10ns reading operation of 288 bits (26.8Gb/s) at a time based on 16Mb memory size by improving sensing margin in temperature range of -40~150’C. It also implemented a competitive minimum IP size and we have secured high yield that enough to mass production as a result of Silicon validation. Based on competitive advantage through technology differentiation, it will be provided to various customers in all eFlash IP Foundry markets including Automotive business.","PeriodicalId":106356,"journal":{"name":"2021 Symposium on VLSI Circuits","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"A 28nm Embedded Flash Memory with 100MHz Read Operation and 7.42Mb/mm2 at 0.85V featuring for Automotive Application\",\"authors\":\"Hyunjin Shin, Myeonghee Oh, Jaeseung Choi, T. Song, J. Kye\",\"doi\":\"10.23919/VLSICircuits52068.2021.9492384\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 28nm embedded Flash memory in this paper is designed for the Automotive application in Foundry. Through Temperature Auto-Tracking Sense Amplifier using the Bit line Charge Boost (BCB) and Bit line Leakage current Compensation (BLC) technology, it succeeded in implementing under 10ns read operation (>100MHz) and size improvement (7.42Mb/mm2). Also Word Line and YMUX Gate Boost (WYGB) is applied to secure a sensing margin at a low voltage (0.85V). These techniques enable 10ns reading operation of 288 bits (26.8Gb/s) at a time based on 16Mb memory size by improving sensing margin in temperature range of -40~150’C. It also implemented a competitive minimum IP size and we have secured high yield that enough to mass production as a result of Silicon validation. Based on competitive advantage through technology differentiation, it will be provided to various customers in all eFlash IP Foundry markets including Automotive business.\",\"PeriodicalId\":106356,\"journal\":{\"name\":\"2021 Symposium on VLSI Circuits\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-06-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 Symposium on VLSI Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/VLSICircuits52068.2021.9492384\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/VLSICircuits52068.2021.9492384","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 28nm Embedded Flash Memory with 100MHz Read Operation and 7.42Mb/mm2 at 0.85V featuring for Automotive Application
A 28nm embedded Flash memory in this paper is designed for the Automotive application in Foundry. Through Temperature Auto-Tracking Sense Amplifier using the Bit line Charge Boost (BCB) and Bit line Leakage current Compensation (BLC) technology, it succeeded in implementing under 10ns read operation (>100MHz) and size improvement (7.42Mb/mm2). Also Word Line and YMUX Gate Boost (WYGB) is applied to secure a sensing margin at a low voltage (0.85V). These techniques enable 10ns reading operation of 288 bits (26.8Gb/s) at a time based on 16Mb memory size by improving sensing margin in temperature range of -40~150’C. It also implemented a competitive minimum IP size and we have secured high yield that enough to mass production as a result of Silicon validation. Based on competitive advantage through technology differentiation, it will be provided to various customers in all eFlash IP Foundry markets including Automotive business.
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