Ovonic统一存储器-一种高性能非易失性存储器技术，适用于独立存储器和嵌入式应用程序

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.992192

M. Gill, T. Lowrey, J. Park

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引用次数: 117

摘要

讨论了Ovonic统一存储器(OUM)技术的发展现状，该技术是一种用于超大规模集成电路独立存储器和嵌入式应用的相变非易失性半导体存储技术。采用0.18 μm 3 V CMOS, 5F/sup 2/至8F/sup 2/的电池被构建在无充电泵的4mb开发车辆中。实现直接覆盖，10ns复位次数，50ns复位次数，1.0×10/sup 12/循环。在120°C下，预计10年的数据保留。

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Ovonic unified memory - a high-performance nonvolatile memory technology for stand-alone memory and embedded applications

The development status of Ovonic Unified Memory (OUM), a phase-change non-volatile semiconductor memory technology for VLSI stand-alone memory and embedded applications, is discussed. Using 0.18 μm 3 V CMOS, cells from 5F/sup 2/ to 8F/sup 2/ are built in a charge-pump-free 4 Mb development vehicle. Direct overwrite, 10 ns reset times, 50 ns set times, and 1.0×10/sup 12/ cycling are achieved. At en-year data retention is projected at 120°C.

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2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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