64 GHz和100 GHz vco在90 nm CMOS采用最佳泵送方法

2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519) Pub Date : 2004-09-13 DOI:10.1109/ISSCC.2004.1332785

L. Franca-Neto, R. Bishop, B. Bloechel

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引用次数: 86

摘要

针对90 nm CMOS集成64 GHz和100 GHz压控振荡器的设计，提出了一种从晶体管向无源网络最佳泵送能量的方法。vco使用片上分布式网络，从1 V电源抽取/spl sim/25 mA，产生0.4 Vp-p振幅的振荡。10 MHz偏置时相位噪声<-110 dBc/Hz, VCO增益为2 GHz/V。

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64 GHz and 100 GHz VCOs in 90 nm CMOS using optimum pumping method

A method to optimally pump energy from the transistors to the passive network is presented for the design of integrated 64 GHz and 100 GHz VCOs in 90 nm CMOS. The VCOs use an on-die distributed network, draw /spl sim/25 mA from a 1 V supply and produce oscillations with 0.4 Vp-p amplitudes. Phase noise is <-110 dBc/Hz at 10 MHz offset, and VCO gain is 2 GHz/V.

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2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)

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