Se-Hwan Kim, Sang-Hun Lee, B. Shrestha, Sun-jin Kim, G. P. Kennedy, Nam-Young Kim, S. Cheon
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A high linearity InGaP/GaAs HBT up-conversion double balanced mixer with common base drive stage
A high linearity double balanced mixer has been developed using InGaP/GaAs HBT technology. Features of the design include a common base drive stage and a common collector output buffer amplifier. The up-conversion mixer shows an input-referred 1-dB compression point (P/sub 1dB, IN/) of 15 dBm and a third order input intercept point (IIP3) of 21.6 dBm. The chip size of the developed mixer is 1.17 mm /spl times/ 1 mm. The isolation of LO-RF and LO-IF in the up-conversion mixer shows 58.5 dB and 86.2 dB, respectively.
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