光传感器用LiSFET掩模的设计与制作

U. Hashim, K. A. Rahman, A. Abdullah
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引用次数: 5

摘要

MOSFET的用途不仅限于放大器和开关,当传感介质集成到MOSFET上时,它具有成为传感器的巨大潜力。本研究旨在研究MOSFET与光导材料的结合,以使用标准光刻工艺作为单一器件的光传感器MOSFET (LiSFET)。在集成电路(IC)制造过程中,光刻(也称为光学光刻)一直用于将电路图案从称为掩模(或简单掩模)的模板转移到硅片上。当使用光源将掩模图像投影到晶圆上时,图像质量通常受到成像系统(也称为曝光系统)性能的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Mask design and fabrication of LiSFET for Light Sensor application
The usage of MOSFET is not limited as amplifier and switch only but it has great potential to become the sensors when sensing mediums which integrated on to MOSFET. This research is intended to study the combination of MOSFET and photoconductive material to perform as a single device light sensor MOSFET (LiSFET) using standard lithography process. Photolithography (also called optical lithography) has long been used to transfer circuit patterns from a template called photomask (or simply mask) on to silicon wafers during integrated circuit (IC) fabrication. When a light source is used to project the mask image onto the wafer, the image quality is often affected by the performance of the imaging system (also called exposure system).
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