{"title":"半导体掺杂玻璃中的飞秒载流子弛豫","authors":"M. Nuss, W. Zinth, W. Kaiser","doi":"10.1063/1.97225","DOIUrl":null,"url":null,"abstract":"Semiconductor-doped glasses, incorporating small CdSxSe1–x or CdSexTe1–x crystallites in a glass matrix, show strong nonlinear absorption1 and large values of the nonlinear optical susceptibility χ8 have been reported in recent degenerate-four-wave-mixing experiments2. This nonlinearity has been attributed to the generation of a dense electron-hole plasma in the semiconductor crystallites.","PeriodicalId":371790,"journal":{"name":"Topical Meeting on Ultrafast Phenomena","volume":"107 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1986-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"108","resultStr":"{\"title\":\"Femtosecond Carrier Relaxation In Semiconductor-Doped Glasses\",\"authors\":\"M. Nuss, W. Zinth, W. Kaiser\",\"doi\":\"10.1063/1.97225\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Semiconductor-doped glasses, incorporating small CdSxSe1–x or CdSexTe1–x crystallites in a glass matrix, show strong nonlinear absorption1 and large values of the nonlinear optical susceptibility χ8 have been reported in recent degenerate-four-wave-mixing experiments2. This nonlinearity has been attributed to the generation of a dense electron-hole plasma in the semiconductor crystallites.\",\"PeriodicalId\":371790,\"journal\":{\"name\":\"Topical Meeting on Ultrafast Phenomena\",\"volume\":\"107 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1986-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"108\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Topical Meeting on Ultrafast Phenomena\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1063/1.97225\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Topical Meeting on Ultrafast Phenomena","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1063/1.97225","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Femtosecond Carrier Relaxation In Semiconductor-Doped Glasses
Semiconductor-doped glasses, incorporating small CdSxSe1–x or CdSexTe1–x crystallites in a glass matrix, show strong nonlinear absorption1 and large values of the nonlinear optical susceptibility χ8 have been reported in recent degenerate-four-wave-mixing experiments2. This nonlinearity has been attributed to the generation of a dense electron-hole plasma in the semiconductor crystallites.
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