双对数PMOS APS中的低功耗FPN衰减方法

C. A. de Moraes Cruz, D. W. de Lima Monteiro, G. Sicard, Francelino Freitas, Alexandre Kennedy Pinto Souza
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引用次数: 0

摘要

主动像素传感器(APS)成像仪工作在对数模式产生高动态范围的图像。然而,这个像素显示出一个小的输出信号电压摆动。与传统的测井APS相比,双对数PMOS APS将信号摆动提高了两倍以上。焦平面阵列上的固定模式噪声在对数模式下尤为重要,但可以通过带参考电压的双采样技术来降低。这个电压基准是通过内部电流建立的,并且受制于更高的功耗。在这项工作中,提出了电压模式下的像素内电压基准,提供比以前的解决方案更有效的控制和更低的功耗,同时保持每个像素五个晶体管。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A low-power FPN attenuation method in the double-log PMOS APS
The active-pixel-sensor (APS) imagers operating in logarithmic mode yield high-dynamic-range images. However, this pixel exhibits a small output signal voltage swing. The double-log PMOS APS improves the signal swing in a factor higher than two compared with the conventional log APS. Fixed-pattern noise across the focal-plane array is particularly critical in the log mode, but can be reduced by double sampling techniques with a voltage reference. This voltage reference is established by means of an internal current and is subject to higher power consumption. In this work an in-pixel voltage reference in voltage mode is proposed, providing a more efficient control and consuming less power than the previous solution, while preserving five transistors per pixel, as before.
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