S. Vaziri, I. Datye, E. Ambrosi, A. Khan, H. Kwon, C. H. Wu, C. Hsu, J. Guy, T. Y. Lee, H. P. Wong, X. Bao
{"title":"第一款无火,低电压(~1.2 V)和低断流(~ 3na) sioxey选择器","authors":"S. Vaziri, I. Datye, E. Ambrosi, A. Khan, H. Kwon, C. H. Wu, C. Hsu, J. Guy, T. Y. Lee, H. P. Wong, X. Bao","doi":"10.1109/vlsitechnologyandcir46769.2022.9830395","DOIUrl":null,"url":null,"abstract":"Operating voltage compatibility and low power consumption are crucial for on-chip integration of high-density one-selector-one-resistor (1S/1R) arrays. However, traditional chalcogenide-based threshold selectors require a one-time first fire operation with voltage higher than the threshold voltage. Here, we introduce a novel SiOTe selector based on a stable silicon oxide matrix, with tunable first fire voltage and ultimately first fire-free characteristics. These selectors achieve low threshold voltages (Vth = 1.1 V – 1.5 V) and low off-current (Ioff ~ 3 nA at 0.5 V for Vth = 1.2 V). SiOTe selectors show promising thermal stability (300 °C, 30 min in air) and endurance of >108 cycles.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors\",\"authors\":\"S. Vaziri, I. Datye, E. Ambrosi, A. Khan, H. Kwon, C. H. Wu, C. Hsu, J. Guy, T. Y. Lee, H. P. Wong, X. Bao\",\"doi\":\"10.1109/vlsitechnologyandcir46769.2022.9830395\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Operating voltage compatibility and low power consumption are crucial for on-chip integration of high-density one-selector-one-resistor (1S/1R) arrays. However, traditional chalcogenide-based threshold selectors require a one-time first fire operation with voltage higher than the threshold voltage. Here, we introduce a novel SiOTe selector based on a stable silicon oxide matrix, with tunable first fire voltage and ultimately first fire-free characteristics. These selectors achieve low threshold voltages (Vth = 1.1 V – 1.5 V) and low off-current (Ioff ~ 3 nA at 0.5 V for Vth = 1.2 V). SiOTe selectors show promising thermal stability (300 °C, 30 min in air) and endurance of >108 cycles.\",\"PeriodicalId\":332454,\"journal\":{\"name\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830395\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830395","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors
Operating voltage compatibility and low power consumption are crucial for on-chip integration of high-density one-selector-one-resistor (1S/1R) arrays. However, traditional chalcogenide-based threshold selectors require a one-time first fire operation with voltage higher than the threshold voltage. Here, we introduce a novel SiOTe selector based on a stable silicon oxide matrix, with tunable first fire voltage and ultimately first fire-free characteristics. These selectors achieve low threshold voltages (Vth = 1.1 V – 1.5 V) and low off-current (Ioff ~ 3 nA at 0.5 V for Vth = 1.2 V). SiOTe selectors show promising thermal stability (300 °C, 30 min in air) and endurance of >108 cycles.