第一款无火,低电压(~1.2 V)和低断流(~ 3na) sioxey选择器

S. Vaziri, I. Datye, E. Ambrosi, A. Khan, H. Kwon, C. H. Wu, C. Hsu, J. Guy, T. Y. Lee, H. P. Wong, X. Bao
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引用次数: 3

摘要

工作电压兼容性和低功耗是实现高密度一选择器一电阻(1S/1R)阵列片上集成的关键。然而,传统的基于硫族的阈值选择器需要一次性的第一次火灾操作,电压高于阈值电压。在这里,我们介绍了一种基于稳定的氧化硅矩阵的新型SiOTe选择器,具有可调的第一火电压和最终的第一无火特性。这些选择器具有低阈值电压(Vth = 1.1 V - 1.5 V)和低关断电流(Vth = 1.2 V时0.5 V关断~ 3 nA)。SiOTe选择器具有良好的热稳定性(300°C,空气中30分钟)和>108次循环的耐久性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
First Fire-free, Low-voltage (~1.2 V), and Low Off-current (~3 nA) SiOxTey Selectors
Operating voltage compatibility and low power consumption are crucial for on-chip integration of high-density one-selector-one-resistor (1S/1R) arrays. However, traditional chalcogenide-based threshold selectors require a one-time first fire operation with voltage higher than the threshold voltage. Here, we introduce a novel SiOTe selector based on a stable silicon oxide matrix, with tunable first fire voltage and ultimately first fire-free characteristics. These selectors achieve low threshold voltages (Vth = 1.1 V – 1.5 V) and low off-current (Ioff ~ 3 nA at 0.5 V for Vth = 1.2 V). SiOTe selectors show promising thermal stability (300 °C, 30 min in air) and endurance of >108 cycles.
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