双应变沟道MOSFET:深入亚微米

2018 Conference on Information and Communication Technology (CICT) Pub Date : 2018-10-01 DOI:10.1109/INFOCOMTECH.2018.8722385

Lalthanpuii Khiangte, R. Dhar

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引用次数: 0

摘要

在沟道区域插入两个应变硅层的MOSFET的发展导致了50nm和100nm沟道长度器件的出现。进一步的可扩展性和器件可持续性分析，以减少低于50nm的栅极长度，这已经成为本文的重点。50nm技术的节点器件已被缩小到30nm通道长度，器件特性已被测试，导致驱动电流提高了约88%

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Double Strained Channel MOSFET: Deep Into Sub-Microns

Development of MOSFET with an intrusion of two strained silicon layers in the channel region has been carried out leading to the advent of 50nm and 100nm channel length devices. Further scalability and device sustainability analysis for reduced gate length of sub-50nm regime have been due, which has been now the focus of this paper. The 50nm technology node device has been scaled down to 30nm channel length and the device characteristics have been examined leading to ~88% enhancement in drive curren.t

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2018 Conference on Information and Communication Technology (CICT)

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