射频应用的高q多对多电容设计

ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364) Pub Date : 2000-09-14 DOI:10.1109/ICMMT.2000.895655

Jin-Taek Lee, Jeongki Choi, Sang-Gug Lee

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引用次数: 2

摘要

给出了一种非常高q的聚对聚电容结构及其测量结果。该多对多电容器采用传统的0.35 /spl μ m CMOS工艺设计。通过优化布局，在2ghz时获得了大于120的q因子。

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High-Q poly-to-poly capacitor design for RF applications

A very high-Q poly-to-poly capacitor structure and the measurement results are presented. The poly-to-poly capacitor is designed on a conventional 0.35 /spl mu/m CMOS process. Through the layout optimization, a Q-factor greater than 120 is obtained at 2 GHz.

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ICMMT 2000. 2000 2nd International Conference on Microwave and Millimeter Wave Technology Proceedings (Cat. No.00EX364)

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