一种用于LTE手机功率放大器的宽电源电压和低rx噪声包络跟踪电源调制器IC

2012 7th European Microwave Integrated Circuit Conference Pub Date : 2012-10-01 DOI:10.23919/EUMC.2012.6459308

Y. Honda, Y. Yokota, N. Goto, N. Matsuno, Y. Saito

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引用次数: 6

摘要

提出了一种用于LTE手机的高效包络跟踪电源调制器集成电路。它采用0.35 um CMOS和可选的6 V mosfet制造，并在2.9至6.0 V的宽电源电压范围内工作。这使得电源调制器可以直接连接到锂离子电池。电源调制器的开关噪声经过精心设计，满足接收频带(Rx)噪声要求。采用1.95 ghz波段、10 mhz带宽的LTE上行链路信号，对由调制器IC和InGaP/ gaas异质结双极晶体管(HBT) PA-IC组成的包络跟踪功率放大器(ET-PA)进行了测试。尽管调制器采用高击穿电压CMOS工艺，ET-PA在输出功率为26 dBm时的功率附加效率(PAE)为33.4%，调节通道漏功率比(ACLR)为-35 dBc。与传统的PA相比，PAE在输出功率为26 dBm和20 dBm时分别提高了3.0和7.3%。Rx噪声为- 134dbm /Hz。

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A wide supply voltage and low-Rx noise Envelope tracking supply modulator IC for LTE handset power amplifiers

A high efficiency envelope tracking supply modulator IC for LTE handset use is presented. It is fabricated using 0.35 um CMOS with optional 6-V-MOSFETs, and operates at a wide supply voltage range from 2.9 to 6.0 V. This enables the supply modulator to be directly connected to a lithium-ion battery. The switching noise of the supply modulator is carefully designed to meet the received band (Rx) noise requirement. An envelope tracking power amplifier (ET-PA) consisting of the modulator IC and an InGaP/GaAs-heterojunction-bipolar-transistor (HBT) PA-IC is examined with 1.95-GHz-band, 10-MHz bandwidth long-term-evolution (LTE) up-link signal. Despite a use of high-breakdown-voltage CMOS process for the modulator, the ET-PA achieves a power-added efficiency (PAE) of 33.4% at an output power of 26 dBm with an adjustment channel leakage power ratio (ACLR) of -35 dBc. In comparison with a conventional PA, the PAE has improved 3.0 and 7.3% at an output power of 26 and 20 dBm, respectively. The Rx noise is -134 dBm/Hz.

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2012 7th European Microwave Integrated Circuit Conference

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