半金属铁磁器件的隧道磁阻

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005. Pub Date : 2005-04-04 DOI:10.1109/INTMAG.2005.1463664

T. Kim, I. Hwang, Y.K. Kim, R. Gambino, W. Park

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引用次数: 0

摘要

介绍了具有大隧穿磁阻的磁隧道结(MTJ)。MTJs由半金属铁磁性Co/sub 2/MnSi (Heusler合金)层、AlO/sub x/作为绝缘隧道势垒层和CoFe铁磁性层组成。通过交换耦合将CoFe层固定在覆有60 nm Ru的反铁磁IrMn上，以防止反铁磁层氧化。采用溅射法在氧化硅衬底上沉积了表面光滑的Heusler合金。

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Extraordinary tunnel magnetoresistance in half metallic ferromagnetic devices

Magnetic tunnel junctions (MTJ) with large tunnelling magnetoresistance are described. The MTJs are comprised of a half-metallic ferromagnetic Co/sub 2/MnSi (a Heusler alloy) layer, AlO/sub x/ as the insulating tunnel barrier, and a ferromagnetic layer of CoFe. The CoFe layer is pinned by exchange coupling to antiferromagnetic IrMn capped with 60 nm of Ru to prevent oxidation of the antiferromagnetic layer. The Heusler alloy with well defined smooth surface roughness was deposited by sputtering on to oxidized silicon substrates using a seed layer of Ta.

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来源期刊

INTERMAG Asia 2005. Digests of the IEEE International Magnetics Conference, 2005.

CiteScore

0.50

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0.00%

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