TCAD分析宽带功率放大器RF-LDMOS的优势

Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST) Pub Date : 2013-05-02 DOI:10.1109/IBCAST.2013.6512185

A. Kashif, S. Azam, K. Hayat, M. Imran

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引用次数: 0

摘要

计算机辅助设计(TCAD)为研究功率放大器(PA)在制造前的设计提供了一种替代方法，对于提取精确的大信号模型非常有用。本文提出了一种基于计算负载-拉力(CLP)分析的宽带放大器从器件到电路的性能研究方法。为了验证TCAD方法，我们设计了一个带输出匹配网络的宽带(1.9 - 2.5 GHz) AB级PA。大信号仿真结果通过提供30.8 dBm的理想射频输出功率来验证最佳阻抗值(Zf)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Advantage of TCAD to analyze RF-LDMOS for the broadband power amplifier

Technology Computer Aided Design (TCAD) provides an alternate method to study the power amplifier (PA) design prior to fabrication and is very useful for the extraction of an accurate large signal model. This paper presents a design approach from device to circuit level to study the performance of a broadband PA based on computational load-pull (CLP) analysis. To validate TCAD approach, we have designed a broadband (1.9 - 2.5 GHz) class AB PA with an output matching network. The large signal simulation results verify the optimum impedance value (Zf) by providing a desired RF output power of 30.8 dBm.

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Proceedings of 2013 10th International Bhurban Conference on Applied Sciences & Technology (IBCAST)

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