一个300 MHz多银行eDRAM宏，具有GND感测，位线扭曲和直接参考单元写入

2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315) Pub Date : 2002-08-07 DOI:10.1109/ISSCC.2002.992171

J. Barth, D. Anand, J. Dreibelbis, E. Nelson

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引用次数: 26

摘要

一个0.12 /spl mu/m的可生长eDRAM宏具有GND感知、位线扭曲、直接参考单元写入、灵活的多银行协议和支持多银行的列冗余。该协议支持同时激活，读/写和预充三家不同的银行。硬件测量验证300 MHz操作，6.6 ns tacc和10 ns trc。

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A 300 MHz multi-banked eDRAM macro featuring GND sense, bit-line twisting and direct reference cell write

A 0.12 /spl mu/m growable eDRAM macro has GND sense, bit-line twisting, direct reference cell write, a flexible multi-banking protocol, and column redundancy to support multi-banking. The protocol supports simultaneous activate, read/write and pre-charge to three different banks. Hardware measurements verify 300 MHz operation, 6.6 ns tacc, and 10 ns trc.

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2002 IEEE International Solid-State Circuits Conference. Digest of Technical Papers (Cat. No.02CH37315)

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