权力的未来与限制[c]

F. Bertotti, P. Erratico, B. Murari
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引用次数: 2

摘要

本文综述了功率集成电路技术的实际实现和未来发展趋势。对高压和大电流两种不同的工艺进行了讨论和比较。特别关注表面稳定性现象及其对可靠性的影响。讨论了中大功率封装的实际全景。从实际应用条件下可耗散的最大功率的物理限制出发,我们分析了直流、交流音频和D类开关放大器这三类操作的输出可用最大功率。对于前两种应用,实际限制似乎主要取决于外部环境(电源调节,热散热器能力),而不是硅芯片本身的电气性能。因此,提供30w连续功率和超过200w的电压电流产品的实际实现似乎是最大的。D类限值似乎主要与功率器件的固有特性有关,如持续饱和电压比、换相速度和二次击穿坚固性。在44v技术中,双极负载的实际实现功率达到80w,因此考虑单极负载时可以达到150w。但是电力技术的新发展指明了如何增加它们的方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Future and Limits of Power I.C.
In this paper we present a review of the actual realizations and future trends for the power IC technologies. Two different processes for high voltage and high current are discussed and compared. Particular attention is devoted to surface stability phenomena and their implications on reliability. The actual panorama for medium and high power packages is discussed. Starting from the phisical limit of the maximum power that can "be dissipated in practical application conditions, we analyse the maximum power available at the out put for three classes of operations: DC, AC audio, and class D switching amplifiers. For the first two applications the actual limits appear to be set mainly by the extermal context (power supply regulation, thermal heatsink capability) instead of electrical performance of the silicon chip itself. So the actual implementations that provide 30 W continuous power and a voltage-current product in excess of 200 W, appear as a maximum. Class D limits appear to be mainly connected to the intrinsic characteristics of power devices, like sustaining-saturation voltage ratio, commutation speed and 2nd breakdown ruggedness. Actual implementations in 44 V technology reach 80 W for bipolar loads, so 150 W are possible when considering unipolar loads. But the new developments in power technologies indicate the way how to increase them.
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