SOI像素器件的最新发展

Proceedings of The 26th International Workshop on Vertex Detectors — PoS(Vertex 2017) Pub Date : 2018-07-31 DOI:10.22323/1.309.0035

K. Hara, D. Sekigawa, S. Endo, W. Aoyagi, S. Honda, T. Tsuboyama, M. Yamada, S. Ono, M. Togawa, Y. Ikegami, Y. Arai, I. Kurachi, T. Miyoshi, J. Haba, K. Hanagaki

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引用次数: 0

摘要

近年来，绝缘体上硅(SOI)单片像素器件的发展和应用得到了极大的推动。在简要回顾了最近SOI在各个科学领域的发展活动之后，我们详细介绍了通过半导体器件首次实现亚微米空间分辨率0.65m的测试光束结果，该器件具有8 × 8m像素尺寸和500m厚度的精细像素检测器(FPIX)。另一个像素为20x20m，厚度为500m的设备SOFIST的空间分辨率为~1.2m。即使信噪比降低，ILC实验所需的更薄的器件也有望成为优秀的候选者。

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Recent Developments of SOI Pixel Devices

Development and application of Silicon-on-Insulator (SOI) monolithic pixel devices has been significantly boosted in recent years. After a brief review of the recent SOI development activities in various sciences, we detail the test-beam results achieving a sub-micron spatial resolution, 0.65 m, first time by a semi-conductor device, with Fine-Pixel Detector (FPIX) which has a pixel size of 8x8 m pixel size and thickness of 500 m. Another device SOFIST with pixels of 20x20 m and thickness of 500m showed a spatial resolution of ~1.2 m. Thinner devices as required for the ILC experiment are expected to be an excellent candidate even with reduced signal-to-noise ratio.

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Proceedings of The 26th International Workshop on Vertex Detectors — PoS(Vertex 2017)

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