一种用于模拟和混合模式电路的新型SOI CBiCMOS兼容器件结构

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings Pub Date : 1995-11-06 DOI:10.1109/TENCON.1995.496330

M. Chan, S. Fung, C. Hu, P. Ko

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引用次数: 0

摘要

提出了一种新型的SOI CBiCMOS兼容结构，可以同时作为MOS和侧双极晶体管工作。在MOS工作过程中，该结构提供了非常有效的体接触，消除了I-V结、低击穿电压和异常亚阈值特性等浮体效应。在双极模式下，与大多数现有的基极接触方案相比，该结构提供了非常有效的基极接触，基极电阻低。

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A novel SOI CBiCMOS compatible device structure for analog and mixed-mode circuits

A novel SOI CBiCMOS compatible structure has been developed which can be operated as both an MOS and lateral bipolar transistor. During the MOS operation, the new structure provides a very effective body contact to eliminate the floating-body effects such as I-V kink, low breakdown voltage and the anomalous subthreshold characteristics. In the bipolar mode, the structure provides a very efficient base contact with low base resistance compared to most existing base contact schemes.

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来源期刊

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings

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