P. Deenapanray, H. Tan, J. Lengyel, A. Durandet, M. Gal, C. Jagadish
{"title":"PECVD SiO/sub x/覆盖的GaAs/Al/sub 0.54/Ga/sub 0.46/As多量子阱中的无杂质互扩散:氧化亚氮流动的影响","authors":"P. Deenapanray, H. Tan, J. Lengyel, A. Durandet, M. Gal, C. Jagadish","doi":"10.1109/COMMAD.1998.791663","DOIUrl":null,"url":null,"abstract":"Impurity-free vacancy interdiffusion of GaAs/Al/sub 0.54/Ga/sub 0.46/As quantum wells (QWs) was achieved using SiO/sub x/ capping followed by rapid thermal annealing at 950/spl deg/C. The SiO/sub x/ films were plasma deposited using N/sub 2/O/SiH/sub 4/ flow at 300/spl deg/C and 20 W rf power. The stoichiometry of capping layers were altered by varying the flowrate of N/sub 2/O. In the samples studied, the above process allows continuously variable energy shifts as high as /spl sim/15O meV while still maintaining clearly resolved excitonic behavior. The degree of intermixing is not controlled by x only but, also, by the density of the SiO/sub x/ layers, Our results, therefore, suggest that, in addition to the solid solubility of Ga in SiO/sub x/, intermixing in SiO/sub x/ capped MQW heterostructures depends on the mobility of Ga atoms in the oxide caps.","PeriodicalId":300064,"journal":{"name":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-12-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Impurity-free interdiffusion in GaAs/Al/sub 0.54/Ga/sub 0.46/As multiple quantum wells capped with PECVD SiO/sub x/: effect of nitrous oxide flow\",\"authors\":\"P. Deenapanray, H. Tan, J. Lengyel, A. Durandet, M. Gal, C. Jagadish\",\"doi\":\"10.1109/COMMAD.1998.791663\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Impurity-free vacancy interdiffusion of GaAs/Al/sub 0.54/Ga/sub 0.46/As quantum wells (QWs) was achieved using SiO/sub x/ capping followed by rapid thermal annealing at 950/spl deg/C. The SiO/sub x/ films were plasma deposited using N/sub 2/O/SiH/sub 4/ flow at 300/spl deg/C and 20 W rf power. The stoichiometry of capping layers were altered by varying the flowrate of N/sub 2/O. In the samples studied, the above process allows continuously variable energy shifts as high as /spl sim/15O meV while still maintaining clearly resolved excitonic behavior. The degree of intermixing is not controlled by x only but, also, by the density of the SiO/sub x/ layers, Our results, therefore, suggest that, in addition to the solid solubility of Ga in SiO/sub x/, intermixing in SiO/sub x/ capped MQW heterostructures depends on the mobility of Ga atoms in the oxide caps.\",\"PeriodicalId\":300064,\"journal\":{\"name\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-12-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMMAD.1998.791663\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMMAD.1998.791663","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Impurity-free interdiffusion in GaAs/Al/sub 0.54/Ga/sub 0.46/As multiple quantum wells capped with PECVD SiO/sub x/: effect of nitrous oxide flow
Impurity-free vacancy interdiffusion of GaAs/Al/sub 0.54/Ga/sub 0.46/As quantum wells (QWs) was achieved using SiO/sub x/ capping followed by rapid thermal annealing at 950/spl deg/C. The SiO/sub x/ films were plasma deposited using N/sub 2/O/SiH/sub 4/ flow at 300/spl deg/C and 20 W rf power. The stoichiometry of capping layers were altered by varying the flowrate of N/sub 2/O. In the samples studied, the above process allows continuously variable energy shifts as high as /spl sim/15O meV while still maintaining clearly resolved excitonic behavior. The degree of intermixing is not controlled by x only but, also, by the density of the SiO/sub x/ layers, Our results, therefore, suggest that, in addition to the solid solubility of Ga in SiO/sub x/, intermixing in SiO/sub x/ capped MQW heterostructures depends on the mobility of Ga atoms in the oxide caps.