decanano mosfet中随机掺杂诱导阈值电压降低和波动的高效三维“原子”模拟技术

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116) Pub Date : 1900-01-01 DOI:10.1109/IWCE.1998.742761

A. Asenov

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引用次数: 4

摘要

提出了一种三维“原子”模拟技术，用于研究0.1 /spl mu/m以下随机掺杂诱导的mosfet阈值电压降低和波动。它允许对随机杂质效应进行统计分析，直至单个杂质水平。在模拟中采用了基于泊松方程单解和简化电流连续性方程解的高效算法。

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Efficient 3D 'atomistic' simulation technique for studying of random dopant induced threshold voltage lowering and fluctuations in decanano MOSFETs

A 3D 'atomistic' simulation technique to study random dopant induced threshold voltage lowering and fluctuations in sub 0.1 /spl mu/m MOSFETs is presented. It allows statistical analysis of random impurity effects down to the individual impurity level. Efficient algorithms based on a single solution of Poisson's equation, followed by the solution of a simplified current continuity equation are used in the simulations.

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来源期刊

1998 Sixth International Workshop on Computational Electronics. Extended Abstracts (Cat. No.98EX116)

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