集成波导与传感器的设计与仿真:迈向完整的硅片光电电路

J. Alarcon-Salazar, M. Aceves-Mijares, I. Zaldívar-Huerta, J. Pedraza
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引用次数: 1

摘要

如今,人们需要将所有元件集成在一块硅片上,从而形成集成的光电电路。本文通过设计和计算仿真,验证了肋型光波导与硅衬底光电二极管耦合的可行性。最终的目标是有一个集成的硅电路光源,光波导和自对准的光电二极管。此外,还详细介绍了传感器的设计和仿真,并提出了集成传感器的制造工艺建议。所提出的光波导是一种以氮化硅为核心的肋型光波导,它能够在400 ~ 800 nm之间传播光信号。光电二极管的设计和仿真考虑了两种不同的拓扑结构、光波导的位置和不同的衬底电阻率。相对于波导端的横向光电二极管是最佳配置。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and simulation of an integrated waveguide and sensor: Towards a complete optoelectronic circuit on silicon
Nowadays, there is a need to integrate in a single silicon chip all the components to have an integrated optoelectronic circuit. In this paper, a design and computational simulation that demonstrate that feasibility of coupling a rib type optical waveguide with a photodiode on silicon substrate is carried out. The final goal is to have an integrated silicon circuit with a light source, an optical waveguide and a photodiode self-aligned. Also, details on the design and simulation of the sensor and some proposals of the fabrication process to integrate them are presented. The proposed optical waveguide is a rib type that uses silicon nitride as core and it is able to propagate an optical signal between 400 to 800 nm. The design and simulation of the photodiode considers two different topologies, position of the optical waveguide and different substrate resistivity. A transversal photodiode relative to the waveguide end appears the best configuration.
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