一种适用于0.5 um以下mosfet热载流子寿命在线可靠性监测的应力技术

27th European Solid-State Device Research Conference Pub Date : 1997-09-22 DOI:10.1109/ESSDERC.1997.194497

C. Dimitriadis, C. Papadas, A. Concannon, N. Villani, E. Vincent, A. Mathewson

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引用次数: 0

摘要

本文的目的是提出一种应力模式，该模式允许在直流应力的100秒内评估亚半微米mosfet的热载流子耐久性。与需要更长的测试时间(即在最大衬底电流下约10秒的直流应力)的经典方法相反，所提出的技术适用于在线可靠性监测应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Stress Technique Suitable For The In-Line Reliability Monitoring Of The Hot Carrier Endurance of Sub-0,5um MOSFETs

The purpose of this paper is to present a stress mode which allows the hot carrier endurance of sub-half micron MOSFETs to be evaluated within 100s of DC stress. Contrary to the classical approach which requires substantially longer test times (i.e. about 10s of DC stress at the maximum substrate current), the proposed technique is suitable for in-line reliability monitoring applications.

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27th European Solid-State Device Research Conference

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