UWB Bandpass Filter Using Spiral and Cross Inductors

This paper investigates the compromise between area and electrical performance of a bandpass filter in CMOS technology, when using planar spiral inductors, cross inductors and combinations of these two types of inductors. A third order UWB band filter with 5 to 10 GHz passband was designed with Chebyshev frequency response and T architecture in 130 nm CMOS technology. Equivalent electrical models for the inductors and capacitors in this technology were developed and used for filter optimization taking into account parasitic effects. Filter layout simulations have indicated that a suitable combination of planar spiral inductors and cross inductors reduces the filter area but preserves its performance. Comparing with the filter implemented only with the planar spiral inductors, there was a 3.5% reduction in the component area and a 5.8% reduction in the filter area.