基于电荷等离子体的TFET中掺杂效应的解析模型

2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA) Pub Date : 2022-10-28 DOI:10.1109/ICTA56932.2022.9963082

Wenbo Li, Qian Xie, Zheng Wang

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引用次数: 0

摘要

本文通过求解包含移动电荷项的泊松方程，建立了电荷等离子体基TFET (CP-TFET)中静电掺杂效应的解析模型。研究了cp - tfet中垂直电位和静电掺杂浓度的封闭形式。同时分析了电极功函数和衬底厚度对其的影响。预测的静电掺杂浓度与CP-TFET的Sentaurus TCAD模拟结果吻合较好。

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An Analytical Model for doping effect in charge-plasma-based TFET

In this paper, an analytical model for electrostatic doping effect in the charge-plasma-based TFET (CP-TFET) is proposed by solving Poisson's equation incorporating the mobile charge term. Closed forms of vertical potential and electrostatic doping concentration in CP-TFETs are developed. Meanwhile, the impacts of the electrode work functions and substrate thicknesses on them are analyzed. This predicted electrostatic doping concentration agrees well with the Sentaurus TCAD simulation results of the CP-TFET.

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2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)

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