面向大块单晶硅柔性存储器的CMOS兼容通用批处理工艺(100)

M. Ghoneim, J. Rojas, A. Kutbee, A. Hanna, M. Hussain
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引用次数: 2

摘要

当今主流的柔性电子研究是通过在有机衬底上放置有机器件来完全取代硅,或者通过将无机器件转移到有机衬底上来部分取代硅。在这项工作中,我们提出了一种实用的方法,结合了有机衬底所需的灵活性和硅半导体工业固有的超高集成密度,将大块/不灵活的硅转化为超薄单晶织物。我们还展示了这种方法在实现完全柔性电子系统方面的有效性。此外,我们还提供了在柔性硅结构上制造各种存储器件的进展报告,以及在硅结构上制造完全柔性存储模块的见解。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)
Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.
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