闪存的容量

Anxiao Jiang, Jehoshua Bruck
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引用次数: 7

摘要

闪存是应用最广泛的一种非易失性电子存储器。与磁记录和光学记录相比,闪存具有独特的特性,即其代表数据的单元水平是使用迭代过程编程的,该过程单调地将每个单元水平向上移动到其目标值。在本文中,我们研究了闪存存储数据的容量。探讨了它们的容量、编程精度和编程时间之间的关系。针对单细胞容量问题进行了研究,提出了一种最优规划算法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
On the capacity of flash memories
Flash memories are the most widely used type of non-volatile electronic memories. Compared to magnetic recording and optical recording, flash memories have the unique property that their cell levels, which represent data, are programmed using an iterative procedure that monotonically shifts each cell level upward toward its target value. In this paper, we study the capacity of flash memories to store data. We explore the relationship among their capacity, programming precision and programming time. The study is focused on the capacity of single cells, and an optimal programming algorithm is presented.
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