高存储器件1MeV P离子注入微缺陷特征的RTA分析研究

Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135) Pub Date : 1998-07-13 DOI:10.1109/IMNC.1998.730047

Byeong-Gyu Roh, Hee-Won Kang, So-Haeng Cho, Sung-Pyo Hong, Keom-Yong Eum, H. Oh

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摘要

本文研究了1 MeV磷离子注入的微缺陷特性，并对RTA过程进行了Rs、XTEM、SRP、SlMS等测量和模拟，当剂量越大，Rp越低，当剂量为1 × 10’3/cm’、5 × lO’/cm’、1 × 10’4/m2时，Rp分别为0.73、0.08 pm、0.9 ~。由于RTA退火时间越长，最大浓度位置离表面越深，浓度越低，在RTA退火之前，我们没有发现任何缺陷，但在RTA退火完成后，我们可以观察到RTA退火将微缺陷转变为二次缺陷，并且我们知道这些缺陷通过1050℃的RTA退火被去除

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Study On Microdefect Characteristics Analysis By RTA in 1MeV P Ion Implantation for High Memory Devices

This article is concerned with researching microdefect characteristics by phosphorus 1 MeV ion implantation and Rs, XTEM, SRP, SlMS for the RTA process was measured and simulated As the dose was higher, the Rp was lower When the dose were 1 x 10'3/cm', 5x lO"/cm', 1 x 10'4/m2, the Rp were 0 73," 08pm, 0 9 ~ respectively. As the RTA annealing time was longer, the maximum concentration position was deeper from the surface and the concentration was lower Before the RTA annealing was done, we could not find any defect But after the RTA annealing was done, we could observe the RTA annealing changed the micro-defects into the secondary defects And we recognized those defects are removed by 1050°C RTA annealing

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Digest of Papers. Microprocesses and Nanotechnology'98. 198 International Microprocesses and Nanotechnology Conference (Cat. No.98EX135)

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