在Si上外延生长的高性能可靠的1.3 μm InAs量子点激光器

2018 23rd Opto-Electronics and Communications Conference (OECC) Pub Date : 2018-07-01 DOI:10.1109/OECC.2018.8730014

D. Jung, R. Herrick, J. Norman, Y. Wan, A. Gossard, J. Bowers

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引用次数: 1

摘要

Si上的1.3 μm InAs量子点激光器显示出4.8 mA的连续阈值电流，外推寿命在35°C时为1000万小时，在60°C时为~65,000小时。

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High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si

1.3 μm InAs quantum dot lasers on Si show a CW threshold current of 4.8 mA and extrapolated lifetimes of ten million hours at 35°C and ~65,000 hours at 60°C.

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来源期刊

2018 23rd Opto-Electronics and Communications Conference (OECC)

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