通过设计一个19 GHz 3.8 dB CMOS LNA，演示了玻璃载波SOP技术

2009 International Symposium on VLSI Design, Automation and Test Pub Date : 2009-04-28 DOI:10.1109/VDAT.2009.5158101

L. Aspemyr, H. Sjoland, Denis Berthiot, J. Proot

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引用次数: 1

摘要

为了证明系统级封装概念在微波设计中的能力，我们制造了一个0.13µm CMOS的19 GHz低功耗、低噪声放大器。CMOS芯片是倒装在集成无源元件的玻璃载体上的芯片。该LNA的功率增益为7db，噪声系数为3.8 dB, 19.2 GHz时的IP1dB为−5.8 dBm。LNA从1.2 V电源消耗5ma。

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Glass carrier SOP technology demonstrated by design of a 19 GHz 3.8 dB CMOS LNA

To demonstrate the capability of the System-on-Package concept for microwave design a 19 GHz low-power, low-noise amplifier in 0.13 µm CMOS is manufactured. A CMOS chip is flip-chip mounted on a glass carrier with integrated passive components. The LNA has a power gain of 7 dB, a 3.8 dB noise figure, and a IP1dB of −5.8 dBm at 19.2 GHz. The LNA consumes 5 mA from a 1.2 V supply.

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2009 International Symposium on VLSI Design, Automation and Test

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