用FSS嵌入CISR片的宽带微波吸收器的设计与制造

Rahul Vashisth, Deepak K. Ghodgaonkar, Sanjeev Gupta
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引用次数: 3

摘要

通过在两片羰基铁填充硅橡胶(CISR)片之间嵌入频率选择表面(FSS),设计并制作了3.95 ~ 8.2 GHz频率范围的宽带微波吸收体。CISR薄片的羰基铁(CI)体积浓度分别为24%和33%。频率选择表面由三个连续的导电方环蚀刻在0.9 mm厚的FR4衬底上。采用矩形介质波导(RDWG)系统对宽带微波吸收体进行了测试,并在CST微波工作室进行了仿真。在3.95 ~ 8.2 GHz正常入射范围内,模拟和实测回波损耗均优于-10 dB。在0°~ 60°的斜入射角范围内,TM偏振模拟回波损耗均优于-10 dB。当入射角小于15°时,TE极化的回波损耗优于-10 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design and Fabrication of Broadband Microwave Absorber using FSS embedded in CISR sheets
A broadband microwave absorber was designed and fabricated in 3.95 to 8.2 GHz frequency range by embedding Frequency Selective Surface (FSS) between two Carbonyl Iron filled Silicon Rubber(CISR) sheets. CISR sheets have 24% and 33% concentration of carbonyl iron (CI) by volume. The frequency selective surface consist of three consecutive conductive square loops etched on 0.9 mm thick FR4 substrate. Broadband microwave absorber was tested by RDWG (Rectangular Dielectric Wave Guide) system and simulated by CST Microwave Studio. Simulated and measured return loss is better then -10 dB in 3.95 to 8.2 GHz in case of normal incidence. Simulated return loss for TM polarization is better then -10 dB for all angles of oblique incidence from 0° to 60°. Return loss is better then -10 dB for TE polarization, when angle of incidence is less then 15°.
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