利用质子注入的单横模滤波:1.48 /spl μ m的1.3 w连续波衍射限制不稳定腔激光器

Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092) Pub Date : 2000-09-25 DOI:10.1109/ISLC.2000.882278

F. Gerard, S. Delepine, H. Bissessur, D. Locatelli, T. Fillion, N. Bouché, P. Salet

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引用次数: 1

摘要

本文报道了利用沿脊波导两侧的多量子阱(MQW)有源层离子注入实现损耗滤波器，并优化了注入工艺，从而提高了1.48 μm不稳定腔激光器的衍射限制功率水平。这使得在1.48 μm处至少有1.3 W的连续波衍射限制功率，这是迄今为止报道的无腔破坏凹槽结构的最高水平。

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Single-transverse-mode filtering utilizing proton implantation: 1.3-W CW diffraction-limited unstable-cavity lasers at 1.48 /spl mu/m

We report the realization of a lossy filter utilizing ion implantation of the multiple-quantum-well (MQW) active layer along both sides of the ridge waveguide, and optimize the implantation process so as to enhance the diffraction-limited power level of our 1.48-μm unstable-cavity lasers. This enables at least 1.3 W of CW diffraction-limited power at 1.48 μm, which is the highest level ever reported for a structure without cavity-spoiling grooves.

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Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)

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