电力电子新材料的研究进展:SiC

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs Pub Date : 1993-05-18 DOI:10.1109/ISPSD.1993.297097

R. Helbig

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引用次数: 4

摘要

讨论了不同碳化硅多晶体的一般物理性质。给出了用于电子器件仿真的6H-SiC的完整参数集。为了演示器件的仿真，讨论了p-n/sup -/n/sup +/二极管和6H-SiC垂直功率MOSFET。

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Progress in new materials for power electronics: SiC

Some general physical properties of the different polytopes of SiC are discussed. A complete set of parameters for 6H-SiC for the simulation of electronic devices is given. To demonstrate the simulation of devices, the p-n/sup -/n/sup +/ diode and the vertical power MOSFET made of 6H-SiC are discussed.<>

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来源期刊

[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs

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