基于BiCMOS技术的多模多标准前端功率放大器设计

Xiangning Fan, Jing Feng, Baoting Xie, Chen Xin
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引用次数: 0

摘要

e类放大器采用0.13$\mu$m SiGe BiCMOS技术,覆盖1.75G-2.75G以内的大部分通信标准,满足通信设备的多种通信标准。本设计还采用了有损匹配、匹配补偿等技术来提高放大器的整体性能。后置仿真结果表明,功率放大器在1.75G-2.75G工作频段内无条件稳定,电路稳定系数大于22,Sll在频段内小于-15dB,说明输入匹配性能良好。输出功率大于26dBm,功率增益大于21dB, PAE大于50%,峰值效率达到60%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Design of Power Amplifier for Multi-mode Multi-standard Front-end based on BiCMOS technology
The class-E amplifier adopts 0.13$\mu$m SiGe BiCMOS technology, covering the most communication standards within 1.75G-2.75G and meets the varieties of communication standards of communication equipment. The design also uses lossy matching, matching compensation technology to enhance the overall performance of the amplifier. The post-simulation results show that the power amplifier is unconditionally stable in the working band of 1.75G-2.75G, the power amplifier is unconditionally stable, the circuit stability coefficient is greater than 22, the Sll is less than -15dB in the frequency band, shows that the input matching performance is good. The output power is more than 26dBm, the power gain is more than 21dB, the PAE is more than 50%, and the peak efficiency reaches 60%.
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