用于光电子会聚的InP膜技术

2020 Opto-Electronics and Communications Conference (OECC) Pub Date : 2020-10-04 DOI:10.1109/OECC48412.2020.9273617

Y. Jiao, J. V. D. van der Tol, K. Williams

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引用次数: 1

摘要

硅上InP膜(IMOS)技术在实现具有速度和能量优势的高密度光子电路方面显示出巨大的潜力。由InP薄膜提供的固有有源成分保证了最高的光电效率。它还可以紧密集成在具有超短互连长度的电子晶圆上，为光子学和电子学的融合铺平了道路。

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InP membrane technology for photonics electronics convergence

InP membrane on silicon (IMOS) technology has shown high potential in realizing high-density photonic circuits with speed and energy benefits. Intrinsic active components offered by the InP membrane promise highest optoelectronic efficiencies. It can also be intimately integrated on electronics wafers with ultrashort interconnect lengths, paving a way towards the convergence of photonics and electronics.

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2020 Opto-Electronics and Communications Conference (OECC)

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