{"title":"器件阻抗对半导体激光器载流子寿命和载流子密度测量的影响","authors":"E. Flynn","doi":"10.1109/DRC.1995.496305","DOIUrl":null,"url":null,"abstract":"Corroboration of a revised view of recombination in 1.3 /spl mu/m InGaAsP lasers is provided by quantitative measurements of the spontaneous emission imaged through substrate metallization windows. These data exhibit sensitivity to the acceptor concentration in the active layer via the dependence of spontaneous emission intensity on the junction voltage. The data demonstrate explicitly the dependence of the spontaneous emission intensity on the excess hole concentration, accurately described by the bimolecular formula, but contrary to the linear dependence inferred from the analysis of uncorrected lifetime data. This analysis constitutes a DC method for estimating the acceptor concentration in bulk-active lasers.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"120 1-2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of device impedance on the measurement of carrier lifetime and carrier density in semiconductor lasers\",\"authors\":\"E. Flynn\",\"doi\":\"10.1109/DRC.1995.496305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Corroboration of a revised view of recombination in 1.3 /spl mu/m InGaAsP lasers is provided by quantitative measurements of the spontaneous emission imaged through substrate metallization windows. These data exhibit sensitivity to the acceptor concentration in the active layer via the dependence of spontaneous emission intensity on the junction voltage. The data demonstrate explicitly the dependence of the spontaneous emission intensity on the excess hole concentration, accurately described by the bimolecular formula, but contrary to the linear dependence inferred from the analysis of uncorrected lifetime data. This analysis constitutes a DC method for estimating the acceptor concentration in bulk-active lasers.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"120 1-2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496305\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496305","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
1.3 /spl μ m /m InGaAsP激光器的自发发射成像通过衬底金属化窗口的定量测量，证实了重新组合的修正观点。这些数据通过自发发射强度对结电压的依赖表现出对活性层中受体浓度的敏感性。这些数据明确地证明了自发发射强度与多余空穴浓度的依赖关系，这是由双分子式精确描述的，但与从未经校正的寿命数据分析中推断的线性依赖关系相反。这一分析构成了估计体源激光器中受体浓度的直流方法。
Effect of device impedance on the measurement of carrier lifetime and carrier density in semiconductor lasers
Corroboration of a revised view of recombination in 1.3 /spl mu/m InGaAsP lasers is provided by quantitative measurements of the spontaneous emission imaged through substrate metallization windows. These data exhibit sensitivity to the acceptor concentration in the active layer via the dependence of spontaneous emission intensity on the junction voltage. The data demonstrate explicitly the dependence of the spontaneous emission intensity on the excess hole concentration, accurately described by the bimolecular formula, but contrary to the linear dependence inferred from the analysis of uncorrected lifetime data. This analysis constitutes a DC method for estimating the acceptor concentration in bulk-active lasers.
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