{"title":"快闪记忆电池隧道氧化物中场致电子陷阱的产生","authors":"Y. Tkachev","doi":"10.1109/IIRW.2015.7437077","DOIUrl":null,"url":null,"abstract":"The processes of trap generation and electron trapping in the tunnel oxide of SuperFlash memory cells have been analyzed. The strongly non-uniform distribution of electric field in the SuperFlash cell allowed us to rule out the electron- or hole-related mechanisms of trap generation. The experimental results of single-trap-induced modulation of the tunneling rate, and the analysis of field and potential distribution in the tunnel oxide, point to the high electric field as a direct cause of electron-trap generation.","PeriodicalId":120239,"journal":{"name":"2015 IEEE International Integrated Reliability Workshop (IIRW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Field-induced generation of electron traps in the tunnel oxide of flash memory cells\",\"authors\":\"Y. Tkachev\",\"doi\":\"10.1109/IIRW.2015.7437077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The processes of trap generation and electron trapping in the tunnel oxide of SuperFlash memory cells have been analyzed. The strongly non-uniform distribution of electric field in the SuperFlash cell allowed us to rule out the electron- or hole-related mechanisms of trap generation. The experimental results of single-trap-induced modulation of the tunneling rate, and the analysis of field and potential distribution in the tunnel oxide, point to the high electric field as a direct cause of electron-trap generation.\",\"PeriodicalId\":120239,\"journal\":{\"name\":\"2015 IEEE International Integrated Reliability Workshop (IIRW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Integrated Reliability Workshop (IIRW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2015.7437077\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2015.7437077","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Field-induced generation of electron traps in the tunnel oxide of flash memory cells
The processes of trap generation and electron trapping in the tunnel oxide of SuperFlash memory cells have been analyzed. The strongly non-uniform distribution of electric field in the SuperFlash cell allowed us to rule out the electron- or hole-related mechanisms of trap generation. The experimental results of single-trap-induced modulation of the tunneling rate, and the analysis of field and potential distribution in the tunnel oxide, point to the high electric field as a direct cause of electron-trap generation.