{"title":"在晶圆级GMR处理过程中,浮栅EEPROM作为EOS指示灯","authors":"E. Granstrom, R. Cermak, P. Tesárek, N. Tabat","doi":"10.1109/6104.930958","DOIUrl":null,"url":null,"abstract":"Potentially damaging charging currents and voltages in wafer-level giant magentoresistance (GMR) plasma processing tools have been measured using floating gate EEPROM (FG-EEPROM) monitor wafers. Although FG-EEPROM monitors have been used as semiconductor process monitors, this report demonstrates their use in ESD-sensitive GMR head production. Use of FG-EEPROM monitors allows quantification of plasma-induced EOS voltages and currents, and can be used in optimizing process tool EOS performance, as is demonstrated in a case study on an ion mill.","PeriodicalId":332394,"journal":{"name":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2000-09-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Floating gate EEPROM as EOS indicators during wafer-level GMR processing\",\"authors\":\"E. Granstrom, R. Cermak, P. Tesárek, N. Tabat\",\"doi\":\"10.1109/6104.930958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Potentially damaging charging currents and voltages in wafer-level giant magentoresistance (GMR) plasma processing tools have been measured using floating gate EEPROM (FG-EEPROM) monitor wafers. Although FG-EEPROM monitors have been used as semiconductor process monitors, this report demonstrates their use in ESD-sensitive GMR head production. Use of FG-EEPROM monitors allows quantification of plasma-induced EOS voltages and currents, and can be used in optimizing process tool EOS performance, as is demonstrated in a case study on an ion mill.\",\"PeriodicalId\":332394,\"journal\":{\"name\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/6104.930958\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2000 (IEEE Cat. No.00TH8476)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/6104.930958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Floating gate EEPROM as EOS indicators during wafer-level GMR processing
Potentially damaging charging currents and voltages in wafer-level giant magentoresistance (GMR) plasma processing tools have been measured using floating gate EEPROM (FG-EEPROM) monitor wafers. Although FG-EEPROM monitors have been used as semiconductor process monitors, this report demonstrates their use in ESD-sensitive GMR head production. Use of FG-EEPROM monitors allows quantification of plasma-induced EOS voltages and currents, and can be used in optimizing process tool EOS performance, as is demonstrated in a case study on an ion mill.