用于亚毫米波和太赫兹应用的新型基于玻璃上硅(SOG)技术的宽带指状移相器

A. Taeb, S. Gigoyan, M. Basha, S. Chaudhuri, S. Safavi-Naeini
{"title":"用于亚毫米波和太赫兹应用的新型基于玻璃上硅(SOG)技术的宽带指状移相器","authors":"A. Taeb, S. Gigoyan, M. Basha, S. Chaudhuri, S. Safavi-Naeini","doi":"10.23919/EuMIC.2019.8909679","DOIUrl":null,"url":null,"abstract":"This paper presents a novel approach to realize a low-cost and wide-band phase shifter structure operating over 150-190 GHz range of frequencies. The proposed finger-shaped phase shifter is implemented based on a newly developed integrated Silicon-On-Glass (SOG) technology. The phase shifting mechanism is achieved by moving a finger-shaped High Conductivity Silicon (HCS) section over the High Resistivity Silicon (HRS) waveguide, using a micro-positioner. Perturbing the silicon waveguide field causes phase shift. The experimental results indicates the proposed SOG finger-shaped phase shifter provides the averages of 15.6 degree/wavelength phase shift and 1.38 dB/wavelength added loss, respectively, over 150-190 GHz range of frequencies.","PeriodicalId":228725,"journal":{"name":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Novel Wide-Band Finger-Shaped Phase Shifter on Silicon-On-Glass (SOG) Technology for Sub-Millimeter Wave and Terahertz Applications\",\"authors\":\"A. Taeb, S. Gigoyan, M. Basha, S. Chaudhuri, S. Safavi-Naeini\",\"doi\":\"10.23919/EuMIC.2019.8909679\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel approach to realize a low-cost and wide-band phase shifter structure operating over 150-190 GHz range of frequencies. The proposed finger-shaped phase shifter is implemented based on a newly developed integrated Silicon-On-Glass (SOG) technology. The phase shifting mechanism is achieved by moving a finger-shaped High Conductivity Silicon (HCS) section over the High Resistivity Silicon (HRS) waveguide, using a micro-positioner. Perturbing the silicon waveguide field causes phase shift. The experimental results indicates the proposed SOG finger-shaped phase shifter provides the averages of 15.6 degree/wavelength phase shift and 1.38 dB/wavelength added loss, respectively, over 150-190 GHz range of frequencies.\",\"PeriodicalId\":228725,\"journal\":{\"name\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 14th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EuMIC.2019.8909679\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 14th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EuMIC.2019.8909679","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

本文提出了一种实现低成本宽带移相器结构的新方法,该移相器的工作频率为150 ~ 190 GHz。所提出的手指状移相器是基于新开发的集成玻璃上硅(SOG)技术实现的。相移机制是通过使用微定位器在高电阻率硅(HRS)波导上移动手指形状的高导电性硅(HCS)部分来实现的。干扰硅波导场会引起相移。实验结果表明,在150 ~ 190 GHz频率范围内,所提出的SOG指状移相器的平均相移度为15.6度/波长,附加损耗为1.38 dB/波长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A Novel Wide-Band Finger-Shaped Phase Shifter on Silicon-On-Glass (SOG) Technology for Sub-Millimeter Wave and Terahertz Applications
This paper presents a novel approach to realize a low-cost and wide-band phase shifter structure operating over 150-190 GHz range of frequencies. The proposed finger-shaped phase shifter is implemented based on a newly developed integrated Silicon-On-Glass (SOG) technology. The phase shifting mechanism is achieved by moving a finger-shaped High Conductivity Silicon (HCS) section over the High Resistivity Silicon (HRS) waveguide, using a micro-positioner. Perturbing the silicon waveguide field causes phase shift. The experimental results indicates the proposed SOG finger-shaped phase shifter provides the averages of 15.6 degree/wavelength phase shift and 1.38 dB/wavelength added loss, respectively, over 150-190 GHz range of frequencies.
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