{"title":"SEMINET:电力电子集成器件/电路仿真的进一步发展","authors":"W. R. Van Dell, W.K. Kyle","doi":"10.1109/PESC.1988.18117","DOIUrl":null,"url":null,"abstract":"SEMINET, a power circuit simulator with an integral device simulator, is reviewed, and enhancements are described. Development and simulation of a dynamic insulated-gate-transistor (IGT) model using SEMINET is discussed, and insights into IGT behavior during turn-off are presented. Simulation of an IGT-based half-bridge circuit is described, and the large-signal transient behavior and interaction of the IGT and flyback diode are examined.<<ETX>>","PeriodicalId":283605,"journal":{"name":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","volume":"515 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"SEMINET: further advances in integrated device/circuit simulation for power electronics\",\"authors\":\"W. R. Van Dell, W.K. Kyle\",\"doi\":\"10.1109/PESC.1988.18117\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"SEMINET, a power circuit simulator with an integral device simulator, is reviewed, and enhancements are described. Development and simulation of a dynamic insulated-gate-transistor (IGT) model using SEMINET is discussed, and insights into IGT behavior during turn-off are presented. Simulation of an IGT-based half-bridge circuit is described, and the large-signal transient behavior and interaction of the IGT and flyback diode are examined.<<ETX>>\",\"PeriodicalId\":283605,\"journal\":{\"name\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"volume\":\"515 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-04-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PESC.1988.18117\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"PESC '88 Record., 19th Annual IEEE Power Electronics Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PESC.1988.18117","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SEMINET: further advances in integrated device/circuit simulation for power electronics
SEMINET, a power circuit simulator with an integral device simulator, is reviewed, and enhancements are described. Development and simulation of a dynamic insulated-gate-transistor (IGT) model using SEMINET is discussed, and insights into IGT behavior during turn-off are presented. Simulation of an IGT-based half-bridge circuit is described, and the large-signal transient behavior and interaction of the IGT and flyback diode are examined.<>
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