聚合物控制在铝蚀刻室,以实现>450小时MTBC

C. Grenci, V. Sauers, R. King, D. Dodge, M. Schlecht, K. Gray, R. Foley
{"title":"聚合物控制在铝蚀刻室,以实现>450小时MTBC","authors":"C. Grenci, V. Sauers, R. King, D. Dodge, M. Schlecht, K. Gray, R. Foley","doi":"10.1109/ISSM.2001.962975","DOIUrl":null,"url":null,"abstract":"Particle control is an important objective in Al etch systems. Unquestionably, polymer buildup must be kept under control. Defects, which result from chamber flaking, typically bridge metal lines together, resulting in lower yield. Excessive polymer buildup requires a chamber wetclean, consuming manpower and equipment uptime. Currently, most metal etch process chambers in the world require a wet clean at 90 - 150 hours. This article presents measures to control polymer buildup, and a qualification procedure to ensure the cleanliness of the chamber prior to running product. It will also show how Cypress Semiconductor has improved its metal etch mean time between cleans to 350 - 450 RF hours while improving yield.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Polymer control in aluminum etch chambers to achieve >450 hours MTBC\",\"authors\":\"C. Grenci, V. Sauers, R. King, D. Dodge, M. Schlecht, K. Gray, R. Foley\",\"doi\":\"10.1109/ISSM.2001.962975\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Particle control is an important objective in Al etch systems. Unquestionably, polymer buildup must be kept under control. Defects, which result from chamber flaking, typically bridge metal lines together, resulting in lower yield. Excessive polymer buildup requires a chamber wetclean, consuming manpower and equipment uptime. Currently, most metal etch process chambers in the world require a wet clean at 90 - 150 hours. This article presents measures to control polymer buildup, and a qualification procedure to ensure the cleanliness of the chamber prior to running product. It will also show how Cypress Semiconductor has improved its metal etch mean time between cleans to 350 - 450 RF hours while improving yield.\",\"PeriodicalId\":356225,\"journal\":{\"name\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"volume\":\"9 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2001.962975\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962975","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

粒子控制是铝腐蚀系统的一个重要目标。毫无疑问,聚合物的积累必须得到控制。由腔室剥落引起的缺陷通常会将金属线桥接在一起,从而导致成品率降低。过多的聚合物堆积需要一个腔室湿清洗,消耗人力和设备的正常运行时间。目前,世界上大多数金属蚀刻工艺室需要在90 - 150小时内进行湿式清洁。本文介绍了控制聚合物堆积的措施,以及运行产品前保证腔室清洁度的确认程序。它还将展示赛普拉斯半导体如何将清洗之间的金属蚀刻平均时间提高到350 - 450 RF小时,同时提高产量。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Polymer control in aluminum etch chambers to achieve >450 hours MTBC
Particle control is an important objective in Al etch systems. Unquestionably, polymer buildup must be kept under control. Defects, which result from chamber flaking, typically bridge metal lines together, resulting in lower yield. Excessive polymer buildup requires a chamber wetclean, consuming manpower and equipment uptime. Currently, most metal etch process chambers in the world require a wet clean at 90 - 150 hours. This article presents measures to control polymer buildup, and a qualification procedure to ensure the cleanliness of the chamber prior to running product. It will also show how Cypress Semiconductor has improved its metal etch mean time between cleans to 350 - 450 RF hours while improving yield.
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