{"title":"n沟道深耗尽SOS/MOSFET的弱累积工作","authors":"R. Jerdonek, W. Bandy, H. Lin","doi":"10.1109/IEDM.1977.189308","DOIUrl":null,"url":null,"abstract":"The purpose of this paper is to determine the dependence of electron mobility increase upon gate potential for the n-channel deep-depletion SOS/MOSFET operating in weak accumulation. This is accomplished by analyzing the unique depth dependence of the carrier mobility in thin SOS films and by characterizing the thickness of the accumulation layer as a function of gate potential. The thickness calculation is simplified with the aid of a closed form approximation for the transcendental relationship between gate and surface potentials. Comparison to device conductance data shows that our theoretical model is accurate.","PeriodicalId":218912,"journal":{"name":"1977 International Electron Devices Meeting","volume":"188 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Weak accumulation operation of the N-channel deep-depletion SOS/MOSFET\",\"authors\":\"R. Jerdonek, W. Bandy, H. Lin\",\"doi\":\"10.1109/IEDM.1977.189308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The purpose of this paper is to determine the dependence of electron mobility increase upon gate potential for the n-channel deep-depletion SOS/MOSFET operating in weak accumulation. This is accomplished by analyzing the unique depth dependence of the carrier mobility in thin SOS films and by characterizing the thickness of the accumulation layer as a function of gate potential. The thickness calculation is simplified with the aid of a closed form approximation for the transcendental relationship between gate and surface potentials. Comparison to device conductance data shows that our theoretical model is accurate.\",\"PeriodicalId\":218912,\"journal\":{\"name\":\"1977 International Electron Devices Meeting\",\"volume\":\"188 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1977 International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1977.189308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1977 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1977.189308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Weak accumulation operation of the N-channel deep-depletion SOS/MOSFET
The purpose of this paper is to determine the dependence of electron mobility increase upon gate potential for the n-channel deep-depletion SOS/MOSFET operating in weak accumulation. This is accomplished by analyzing the unique depth dependence of the carrier mobility in thin SOS films and by characterizing the thickness of the accumulation layer as a function of gate potential. The thickness calculation is simplified with the aid of a closed form approximation for the transcendental relationship between gate and surface potentials. Comparison to device conductance data shows that our theoretical model is accurate.
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