Mihail Jefremow, T. Kern, Ulrich Backhausen, J. Elbs, B. Rousseau, Christoph Roll, L. Castro, T. Roehr, E. Paparisto, K. Herfurth, R. Bartenschlager, Stefanie Thierold, R. Renardy, Stephan Kassenetter, N. Lawal, M. Strasser, W. Trottmann, D. Schmitt-Landsiedel
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A 65nm 4MB embedded flash macro for automotive achieving a read throughput of 5.7GB/s and a write throughput of 1.4MB/s
This paper presents a 65nm embedded flash macro for automotive applications with read and write throughput of 5.7GB/s and 1.4MB/s respectively. The high read throughput rate is achieved by using the multi voltage domain multiplexer design enabling a low voltage read path and the local ground referenced read circuit design utilizing the robust time domain source side sense amplifier (SoSiSA) [1]. This allows low voltage sub 50mV swing read operation for high speed read-out under more than 30mV system noise. The hot source triple poly (HS3P) embedded flash memory cell [2] allows sub 5μs low current write operation enabling high write throughput up to a junction temperature of 170°C.
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