用于空间应用的增强冷阴极电子场发射的mems栅极的研制

Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737) Pub Date : 2004-07-16 DOI:10.1109/IVNC.2004.1355019

H. Goldberg, P. A. Encarnacion, B. Gilchrist, R. Clarke, D. Morris, J.L. Van Noord

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引用次数: 1

摘要

密歇根大学开发了一种微米级孔阵列的门控结构。该结构可以放置在任何均匀结构的平面发射表面上，并偏压以影响电子发射。该结构被设计为与各种发射表面技术兼容，如薄膜(例如，氮化硼)，碳纳米管和自组装纳米结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Development of a MEMS-based gate to enhance cold-cathode electron field emission for space applications

A gated structure of arrays of micron-sized holes has been developed at the University of Michigan. The structure can be positioned atop any uniformly structured planar emitting surface and biased to effect electron emission. The structure is designed to be compatible with a variety of emission surface technologies such as thin films (e.g., boron nitride), carbon nanotubes, and self-assembled nanostructures.

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Technical Digest of the 17th International Vacuum Nanoelectronics Conference (IEEE Cat. No.04TH8737)

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