具有扩展腔的GaN垂直腔面发射激光器

Conference on Lasers and Electro-Optics, 2003. CLEO '03. Pub Date : 1900-01-01 DOI:10.1109/ISCS.2003.1239948

Si-Hyun Park, Jaehoon Kim, H. Jeon, T. Sakong, Sungnam Lee, S. Chae, Y. Park

{"title":"具有扩展腔的GaN垂直腔面发射激光器","authors":"Si-Hyun Park, Jaehoon Kim, H. Jeon, T. Sakong, Sungnam Lee, S. Chae, Y. Park","doi":"10.1109/ISCS.2003.1239948","DOIUrl":null,"url":null,"abstract":"An optically pumped room temperature GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in a microlens-integrated extended cavity structure. The VCSEL device lased at record-low threshold excitation intensity of 160 kW/cm/sup 2/.","PeriodicalId":432096,"journal":{"name":"Conference on Lasers and Electro-Optics, 2003. CLEO '03.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GaN vertical-cavity surface-emitting laser with an extended cavity\",\"authors\":\"Si-Hyun Park, Jaehoon Kim, H. Jeon, T. Sakong, Sungnam Lee, S. Chae, Y. Park\",\"doi\":\"10.1109/ISCS.2003.1239948\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An optically pumped room temperature GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in a microlens-integrated extended cavity structure. The VCSEL device lased at record-low threshold excitation intensity of 160 kW/cm/sup 2/.\",\"PeriodicalId\":432096,\"journal\":{\"name\":\"Conference on Lasers and Electro-Optics, 2003. CLEO '03.\",\"volume\":\"43 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference on Lasers and Electro-Optics, 2003. CLEO '03.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCS.2003.1239948\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference on Lasers and Electro-Optics, 2003. CLEO '03.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCS.2003.1239948","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在微透镜集成的扩展腔结构中，展示了一种室温光泵浦gan基垂直腔面发射激光器。该VCSEL装置以创纪录的低阈值激发强度(160 kW/cm/sup /)发射。

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GaN vertical-cavity surface-emitting laser with an extended cavity

An optically pumped room temperature GaN-based vertical-cavity surface-emitting laser (VCSEL) has been demonstrated in a microlens-integrated extended cavity structure. The VCSEL device lased at record-low threshold excitation intensity of 160 kW/cm/sup 2/.

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Conference on Lasers and Electro-Optics, 2003. CLEO '03.

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