{"title":"肖特基二极管、片上射频功率检测器的设计与制造","authors":"W. Jeon, John C. Rodgers, J. Melngailis","doi":"10.1109/ISDRS.2003.1272103","DOIUrl":null,"url":null,"abstract":"Schottky diodes are fast rectifying devices and can be used as RF power detectors. In this article we designed a mask set for fabricating Schottky diodes with reduced contact size and minimum series resistance between the n and n+ regions. Processing steps used are: patterning of SiO/sub 2/, n/sup +/ activation by rapid thermal annealing, e-beam Al deposition, and Al patterning. After fabricating the diodes, RF power detecting characteristics are measured by directly irradiating chips with RF power. In some cases, we also injected power by contact probes.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"32","resultStr":"{\"title\":\"Design and fabrication of Schottky diode, on-chip RF power detector\",\"authors\":\"W. Jeon, John C. Rodgers, J. Melngailis\",\"doi\":\"10.1109/ISDRS.2003.1272103\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Schottky diodes are fast rectifying devices and can be used as RF power detectors. In this article we designed a mask set for fabricating Schottky diodes with reduced contact size and minimum series resistance between the n and n+ regions. Processing steps used are: patterning of SiO/sub 2/, n/sup +/ activation by rapid thermal annealing, e-beam Al deposition, and Al patterning. After fabricating the diodes, RF power detecting characteristics are measured by directly irradiating chips with RF power. In some cases, we also injected power by contact probes.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"32\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272103\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272103","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design and fabrication of Schottky diode, on-chip RF power detector
Schottky diodes are fast rectifying devices and can be used as RF power detectors. In this article we designed a mask set for fabricating Schottky diodes with reduced contact size and minimum series resistance between the n and n+ regions. Processing steps used are: patterning of SiO/sub 2/, n/sup +/ activation by rapid thermal annealing, e-beam Al deposition, and Al patterning. After fabricating the diodes, RF power detecting characteristics are measured by directly irradiating chips with RF power. In some cases, we also injected power by contact probes.
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