基于国产GaAs mHEMT工艺的共面ka波段单片放大器

M. Cherkashin, K. Dmitrienko, A. Kokolov, I. Dobush, A. S. Salnikov, Y. Fedorov, F. I. Sheyerman, L. Babak
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引用次数: 0

摘要

提出了一种基于国内0.15 μm GaAs mHEMT技术的ka波段单级和两级单片共面放大器的设计方案。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Co-planar Ka-band monolithic amplifiers based on domestic GaAs mHEMT process
The design of Ka-band single- and two-stage monolithic coplanar amplifiers (CAs) based on the domestic 0.15 μm GaAs mHEMT technology is presented.
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