提高失效电流的NPN ESD保护装置的优化

2020 International EOS/ESD Symposium on Design and System (IEDS) Pub Date : 2021-06-23 DOI:10.23919/IEDS48938.2021.9468822

J. Zeng, Raunak Kumar, T. Tsai, Sevashanmugam Marimuthu, R. Gauthier

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引用次数: 1

摘要

本文提出了一种基于NPN的高压静电放电保护装置，并在集电极区设计了PBL。在硅上的实验表明，与无PBL的结构相比，该结构的失效电流提高了2.7倍。它具有触发电压和保持电压可调而不发生It2退化的灵活特性。

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Optimization of NPN ESD Protection Device for Improved Failure Current

This paper presents a high voltage NPN based ESD protection device with a designed PBL under collector region. Experiment on silicon shows it achieves 2.7X failure current improvement compared to structure without PBL. It has a flexible feature of tunable trigger voltage and holding voltage without It2 degradation.

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2020 International EOS/ESD Symposium on Design and System (IEDS)

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