基于inp的HEMT技术的90Gb/s 2:1多路复用IC

Toshihide Suzuki, Y. Nakasha, Tsuyoshi Takahashi, K. Makiyama, Kenji Imanishi, Tatsuya Hirose, Yuu Watanabe
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引用次数: 25

摘要

90Gb/s 2:1多路复用IC采用0.13/spl mu/m栅极基于inp的HEMT技术。并行的2-ch输入数据被序列化。差分输出为0.7V/sub / pp/。1.9/spl倍/1.8mm/sup 2/晶片从-5.2V电源消耗1.3W。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 90Gb/s 2:1 multiplexer IC in InP-based HEMT technology
A 90Gb/s 2:1 multiplexer IC uses 0.13/spl mu/m-gate InP-based HEMT technology. Parallel 2-ch input data are serialized. The differential outputs are 0.7V/sub pp/. The 1.9/spl times/1.8mm/sup 2/ die consumes 1.3W from a -5.2V supply.
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